목록 게시판 리스트 옵션 검색 A Novel Bias Temperature Instability Characterization Methodology for High-k MOSFETs Conference Proc. of ESSDERC, p.387-390 Author D.Heh, G. Bersuker, R.Choi, C.D. Young, and B. H. Lee Year 2006 Date 2006 학회구분 International File 2006_ESSDERC_DHEH.pdf (638.6K) 0회 다운로드 DATE : 2021-04-02 12:49:39 D.Heh, G. Bersuker, R.Choi, C.D. Young, and B. H. Lee, “A Novel Bias Temperature Instability Characterization Methodology for High-k MOSFETs”, Proc. of ESSDERC, p.387-390, (2006).
