Fermi-level Pinning and Threshold Voltage Roll-Off Phenomena at Low Effective Oxide Thicknesses for p-MOS Work Function Metal Gates
- Conference
- ISAGST
- Author
- H.C. Wen, K. Choi, C. S. Park, H. Luan, H. Alshareef, H. R. Harris, H.B. Park, M. Quevedo, G. Bersuker, P. Lysaght, P. Majhi, S.C. Song and B. H. Lee
- Year
- 2006
- Date
- 2006
- 학회구분
-
International
H.C. Wen, K. Choi, C. S. Park, H. Luan, H. Alshareef, H. R. Harris, H.B. Park, M. Quevedo, G. Bersuker, P. Lysaght, P. Majhi, S.C. Song and B. H. Lee, “Fermi-level Pinning and Threshold Voltage Roll-Off Phenomena at Low Effective Oxide Thicknesses for p-MOS Work Function Metal Gates”, ISAGST, (2006).
