Improved passivation and characterization of the Ge/HfSiO interface enabling surface channel Ge pFETs
- Conference
- discussed at SISC
- Author
- H. J. Na, C. Krug, S. Joshi1, D. Heh, P. D. Kirsch, R. Choi, B. H. Lee, R. Jammy, S. K. Banerjee, and J. C. Lee
- Year
- 2006
- Date
- 2006
- 학회구분
-
International
H. J. Na, C. Krug, S. Joshi1, D. Heh, P. D. Kirsch, R. Choi, B. H. Lee, R. Jammy, S. K. Banerjee, and J. C. Lee, “Improved passivation and characterization of the Ge/HfSiO interface enabling surface channel Ge pFETs”, discussed at SISC, (2006).
