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A novel electrode induced strain engineering for High performance SOI finFET utilizing Si(110) channel for both nMOS and pMOS

Conference: Tech. Dig. of IEDM

Author: C.Y. Kang, R. Choi, S. C. Song, K. Choi, B. S. Ju, M. M. Hussain, B. H. Lee, G. Bersuker, C. Young, D. Heh, P. Kirsch, J. Barnet, J-W. Yang, P. Zeitzoff, H-H Tseng, R. Jammy

Year: 2006

Date: 2006

학회구분: International

File: 2006_IEDM_CYKANG.pdf (540.9K) 0회 다운로드 DATE : 2021-04-02 12:58:51

C.Y. Kang, R. Choi, S. C. Song, K. Choi, B. S. Ju, M. M. Hussain, B. H. Lee, G. Bersuker, C. Young, D. Heh, P. Kirsch, J. Barnet, J-W. Yang, P. Zeitzoff, H-H Tseng, R. Jammy, “A novel electrode induced strain engineering for High performance SOI finFET utilizing Si(110) channel for both nMOS and pMOS”, Tech. Dig. of IEDM, (2006).