목록 게시판 리스트 옵션 검색 Electrical Characteristics of Back Gated FET on a Wrinkle Free Graphene Channel Conference Ext. Abs. of Solid State Devices and Materials (SSDM) Author C. Cho, S.K. Lim, C.G. Kang, Y.G. Lee, H.J. Hwang, E.J. Park, and B.H. Lee Year 2011 Date 2011 학회구분 International File 2011_SSDM_CCHO.pdf (210.0K) 0회 다운로드 DATE : 2021-04-02 14:28:06
