포항공대 EESL Fearless challenge

Mobility Enhancement in Strained Si NMOSFETs with HfO2 Gate Dielectrics

Conference

Tech. Dig. of VLSI Symposium

Author

K. Rim, E.P. Gusev, C. D’Emic, H. Chen, J. Chu, J. Ott, B. H. Lee, A. Mocuta, K. Chan, T. Kanarsky, D. Boyd, V. Mazzeo, M. Ieong, S.L. Cohen, H.-S. Wong

Year

2002

Date

2002

학회구분

International

File

2002_Tech.Dig.VLSI.Sym_K.Rim.pdf (268.1K) 0회 다운로드 DATE : 2021-04-02 14:29:58