Mobility Enhancement in Strained Si NMOSFETs with HfO2 Gate Dielectrics
Conference
Tech. Dig. of VLSI Symposium
Author
K. Rim, E.P. Gusev, C. D’Emic, H. Chen, J. Chu, J. Ott, B. H. Lee, A. Mocuta, K. Chan, T. Kanarsky, D. Boyd, V. Mazzeo, M. Ieong, S.L. Cohen, H.-S. Wong