포항공대 EESL Fearless challenge

High Performance CMOS Devices on SOI for 90 nm Technology Enhanced by RSD (Raised Source/Drain) and Thermal Cycle/Spacer Engineering

Conference

Tech. Dig. of Int. Electron Device Meetings

Author

H. Park, W. Rausch, H. Utomo, K. Matsumoto, H. Nii, S. Kawanaka, P. Fisher, S-H. Oh, J. Snare, W. Clark, A.C. Mocuta, J. Holt, R. Mo, T. Sato , D. Mocuta, B. H. Lee, O. Dokumaci, P. O’Neil, D. Brown, J. Suenaga, Y. Li, L. Brown , J. Nakos,K. Hathorn, P. R

Year

2003

Date

2003

학회구분

International

File

2003_Tech.Dig.IEDM_H.Park.pdf (288.6K) 0회 다운로드 DATE : 2021-04-02 14:34:00