목록 게시판 리스트 옵션 검색 Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric applications Conference Tech. Dig. of Int. Electron Device Meetings Author B. H. Lee, L. Kang, W. Qi, R. Nieh, K. Onishi, and J. C. Lee Year 1999 Date 1999 학회구분 International File 1999_IEDM_BHLEE.pdf (385.7K) 2회 다운로드 DATE : 2021-04-01 16:51:52
