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    • Effect of high pressure deuterium annealing on electrical and reliability characteristics of MOSFETs with high-k gate dielectric
    Conference
    Proc. of IRPS
    Author
    H. Park, M.S. Rahman, M. Chang, B.H. Lee, M.Gardner, C.D. Young, H. Hwang
    Year
    2005
    Date
    2005
    학회구분
    International
    File
    2005_IRPS_HPARK.pdf (415.4K) 0회 다운로드 DATE : 2021-04-03 21:16:32

    H. Park, M. S. Rahman, M. Chang, B. H. Lee, M. Gardner, C. D. Young and H. Hwang, “Effect of high pressure deuterium annealing on electrical and reliability characteristics of MOSFETs with high-k gate dielectric”, Proc. of IRPS, p.646, (2005).