Dominant SILC mechanisms in HfO2/TiN gate NMOS and PMOS transistors
- Year
- 2005
- Date
- 2005
- 학회구분
- International
- File
- 2005_IRPS_SAKRISHNAN.pdf (479.0K) 0회 다운로드 DATE : 2021-04-03 21:18:01
S.A. Krishnan, J.J. Peterson, C. Young, G. Brown, R. Choi, R. Harris, J. Sim, B. H. Lee, P. Zeitzoff, P. Kirsch, J.Gutt, H.J. Li, K. Matthews, J.C. Lee, and G. Bersuker, “Dominant SILC mechanisms in HfO2/TiN gate NMOS and PMOS transistors”, Proc. of IRPS, p.642, (2005).