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    • Effect of High-k Post-Deposition Cleaning in Improving CMOS Bias Instabilities and Mobility: A Potential Issue in Reliability of Dual Metal Gate Technology
    Conference
    Proc. of IRPS
    Author
    M.S. Akbar, N. Moumen, J. Barnett, B.H. Lee, J.C. Lee
    Year
    2005
    Date
    2005
    학회구분
    International
    File
    2005_IRPS_MSAKBAR.pdf (427.6K) 0회 다운로드 DATE : 2021-04-03 21:19:09

    M. S. Akbar, N. Moumen, J. Barnett, B. H. Lee and J.C. Lee, “Effect of High-k Post-Deposition Cleaning in Improving CMOS Bias Instabilities and Mobility: A Potential Issue in Reliability of Dual Metal Gate Technology”, Proc. of IRPS, p.640, (2005).