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    • Implication of polarity dependence degradation on NMOSFET with polysilicon/Hf-silicate gate stack
    Conference
    Proc. of IRPS
    Author
    R. Choi, B.H. Lee, C.D. Young, J.H. Sim, K. Mathews, G. Bersuker, P. Zeitzoff
    Year
    2005
    Date
    2005
    학회구분
    International
    File
    2005_IRPS_RCHOI.pdf (467.3K) 0회 다운로드 DATE : 2021-04-03 21:23:06

    R. Choi, B. H. Lee, C. D. Young, J. H. Sim, K. Mathews, G. Bersuker, P. Zeitzoff, “Implication of polarity dependence degradation on NMOSFET with polysilicon/Hf-silicate gate stack”, Proc. of IRPS, p.636, (2005).