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    • Comparison of NMOS and PMOS stress for determining the source of NBTI in TiN/HfSiON devices
    Conference
    Proc. of IRPS
    Author
    R. Harris, R. Choi, B.H. Lee, C.D. Young, J.H. Sim, K. Mathews, P. Zeitzoff, P. Majhi, G. Bersuker
    Year
    2005
    Date
    2005
    학회구분
    International
    File
    2005_IRPS_RHARRIS.pdf (586.3K) 0회 다운로드 DATE : 2021-04-03 21:24:10

    R. Harris, R. Choi, B. H. Lee, C. D. Young, J. H. Sim, K. Mathews, P. Zeitzoff, P. Majhi, and G. Bersuker, “Comparison of NMOS and PMOS stress for determining the source of NBTI in TiN/HfSiON devices”, Proc. of IRPS, p.80, (2005).