Interfacial Layer Dependence of HfSixOy Gate Stacks on Vt Instability and Charge Trapping Using Ultra-Short Pulse I-V Characterization
- Year
- 2005
- Date
- 2005
- 학회구분
- International
- File
- 2005_IRPS_CDYOUNG.pdf (882.4K) 0회 다운로드 DATE : 2021-04-03 21:25:21
C.D. Young, R. Choi, J.H. Sim, B. H. Lee, P. Zeitzoff, bY. Zhao, K. Matthews, G.A. Brown, and G. Bersuker, “Interfacial Layer Dependence of HfSixOy Gate Stacks on Vt Instability and Charge Trapping Using Ultra-Short Pulse I-V Characterization”, Proc. of IRPS, p.75, (2005).