목록 게시판 리스트 옵션 검색 MOSCAP and MOSFET characteristics using ZrO2 gate dielectric deposited directly on Si Conference Tech. Dig. of Int. Electron Device Meetings Author W. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, K. Onishi, T. Nagai, S. Banerjee, and J. C. Lee Year 1999 Date 1999 학회구분 International File 1999_IEDM_W_Qi.pdf (503.4K) 0회 다운로드 DATE : 2021-04-01 16:52:31
