Work function engineering of RuHf alloys as gate electrodes for future generation dual metal CMOS
- Year
- 2005
- Date
- 2005
- 학회구분
- International
- File
- 2005_VLSITSA_HCWEN.pdf (366.5K) 0회 다운로드 DATE : 2021-04-03 21:28:50
H.C. Wen, P. Majhi, H. Alshareef, C. Huffman, K. Choi, P. Lysaght, R. Harris, H. Luand, and B. H. Lee, “Work function engineering of RuHf alloys as gate electrodes for future generation dual metal CMOS”, Proc. of VLSI-TSA, p.107, (2005).