Cold and Hot Carrier effects on HfO2 and HfSiO NMOSFETS with TiN gate electrode
- Year
- 2005
- Date
- 2005
- 학회구분
- International
- File
- 2005_DRC_JHSIM.pdf (1.0M) 0회 다운로드 DATE : 2021-04-03 21:29:32
J.H. Sim, S.C. Song, R. Choi, C.D. Young, G. Bersuker, S.H. Bae, D.L. Kwong and B. H. Lee, “Cold and Hot Carrier effects on HfO2 and HfSiO NMOSFETS with TiN gate electrode”, Proc. of DRC, (2005).