Interfacial layer properties in high-k gate dielectric transistors
- Year
- 2005
- Date
- 2005
- 학회구분
- International
G. Bersuker, J. Peterson, J. Barnet, J. Sim, R. Choi, B. H. Lee, P. Lysaght, H. R. Huff, “Interfacial layer properties in high-k gate dielectric transistors”, ECS spring meeting, (2005).