Comparison of MOSFET characteristics between ALD and MOCVD TiN metal gate on Hf silicate
- Year
- 2005
- Date
- 2005
- 학회구분
- International
S.C.Song, B. H. Lee, Z.Zhang, K.Choi, S.H Bae, H.Alshareef, P.Majhi, H.C.Wen, J.Bennett , B.Sassman, and P. Zeitzoff, “Comparison of MOSFET characteristics between ALD and MOCVD TiN metal gate on Hf silicate”, ECS spring meeting, (2005).