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    • Integration of Dual Metal Gate CMOS with TaSiN and Ru Gate Electrodes on HfO2 Gate Dielectric
    Conference
    Proc. of VLSI
    Author
    Z.B. Zhang, S.C. Song, C. Huffman, J. Barnett, N. Moumen, H. Alshareef, P. Majhi, M. Hussain, M.S. Akbar, J.N. Sim, S.H. Bae, B. Sassman, B.H. Lee
    Year
    2005
    Date
    2005
    학회구분
    International
    File
    2005_VLSI_ZBZHANG.pdf (474.3K) 0회 다운로드 DATE : 2021-04-03 21:48:35

    Z.B. Zhang, S.C. Song, C. Huffman, J. Barnett, N. Moumen, H. Alshareef, P. Majhi, M. Hussain, M.S. Akbar, J.N. Sim, S.H. Bae, B. Sassman, and B. H. Lee, “Integration of Dual Metal Gate CMOS with TaSiN and Ru Gate Electrodes on HfO2 Gate Dielectric”, Proc. of VLSI, p.50, (2005).