Interface between c-Si and the High-k dielectric HfO2: Characterization by rotating compensator spectroscopic ellipsometry (RCSE)
- Conference
- Proceedings of AVS First International Conference on Microelectronics and Interfaces, Pheonix, Arizona
- Author
- J. Leng, S.Li, J.Opsal, B. H. Lee, and J. C. Lee
- Year
- 2000
- Date
- 2000
- 학회구분
-
International
