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Temperature effect on the reliability of ZrO2 gate dielectric deposited directly on silicon

Conference

Proceedings of International Reliability Physics Symposium

Author

W. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon, K. Onishi, S. Gopalan, and J. C. Lee

Year

2000

Date

2000

학회구분

International

File

2000_Proc.IRPS_W.Qi.pdf (468.8K) 0회 다운로드 DATE : 2021-04-01 16:56:15