Demonstration of frequency doubler using ZnO-DNTT antiambipolar transistor with high peak-to-valley ratio (>106)
Conference
Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE)
Author
H.I.Lee, Y.S.Lee, S.M.Kim, S.Y.Kim, H.J.Hwang, and B.H.Lee*
Year
2020
Date
2020
학회구분
International
File
ENGE2020_이호인.pdf (2.0M) 1회 다운로드 DATE : 2021-04-04 14:14:28