목록 게시판 리스트 옵션 검색 Demonstration of frequency doubler using ZnO-DNTT antiambipolar transistor with high peak-to-valley ratio (>106) Conference Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE) Author H.I.Lee, Y.S.Lee, S.M.Kim, S.Y.Kim, H.J.Hwang, and B.H.Lee* Year 2020 Date 2020 학회구분 International File ENGE2020_이호인.pdf (2.0M) 3회 다운로드 DATE : 2021-04-04 14:14:28
