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    • Mobility Enhancement of ALD HfO2/TiN Gate Stacks Through Improved Charge Trapping Characteristics of 2.0 nm HfO2
    Conference
    Proc. of ESSDERC
    Author
    P.D. Kirsch, S.C. Song, J.H. Sim, S. Krishnan, J. Gutt, J. Peterson, H.-J. Li, M. Quevedo-Lopez, C.D. Young, R. Choi, J. Barnett, N. Moumen, K.S. Choi, , C. Huffman, P. Majhi, M. Gardner, G. Brown, G. Bersuker, B.H. Lee
    Year
    2005
    Date
    2005
    학회구분
    International

    P.D. Kirsch, S.C.Song, J.H.Sim, S. Krishnan, J.Gutt, J. Peterson, H.-J Li, M. Quevedo-Lopez, C.D.Young, R.Choi, J.Barnett, N.Moumen, , K.S.Choi, , C.Huffman,P.Majhi, M.Gardner, G.Brown, G.Bersuker, B. H. Lee, “Mobility Enhancement of ALD HfO2/TiN Gate Stacks Through Improved Charge Trapping Characteristics of 2.0 nm HfO2”, Proc. of ESSDERC, (2005).