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    • Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode
    Conference
    Ext. Abs. of Symp. on Solid State Device and Materials
    Author
    H.K. Park, R. Choi, B.H. Lee, C.D. Young, M. Chang, J.C. Lee, H. Hwang
    Year
    2005
    Date
    2005
    학회구분
    International

    H.K. Park, R. Choi, B. H. Lee, C.D. Young, M. Chang, J.C. Lee and H. Hwang, “Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode”, Ext. Abs. of Symp. on Solid State Device and Materials, (2005).