NBTI Dependence on Dielectric Thickness in Ultra-scaled HfSiO Dielectric/ ALD-TiN Gate Stacks
- Year
- 2005
- Date
- 2005
- 학회구분
- International
S.A. Krishnan, M. Quevedo, R. Harris, P. D. Kirsch, R. Choi, B. H. Lee, G. Bersuker, J. Peterson, H-J. Li, C. Young and J.C. Lee, “NBTI Dependence on Dielectric Thickness in Ultra-scaled HfSiO Dielectric/ ALD-TiN Gate Stacks”, Ext. Abs. of Symp. on Solid State Device and Materials, (2005).