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    • Physical Origin of Fast Transient Charging in Hafnium Based Gate Dielectrics
    Conference
    Ext. Abs. of Symp. on SSDM
    Author
    B.H. Lee, R. Choi, S.C. Song, J. Sim, C. Young, G. Bersuker, H.K. Park, H. Hwang
    Year
    2005
    Date
    2005, invited
    학회구분
    International

    B. H. Lee, R. Choi, S.C. Song, J.Sim, C.Young, G. Bersuker, and H.K. Park and H.Hwang, “Physical Origin of Fast Transient Charging in Hafnium Based Gate Dielectrics”, Ext. Abs. of Symp. on SSDM, (2005), Invited.