Physical Origin of Fast Transient Charging in Hafnium Based Gate Dielectrics
- Year
- 2005
- Date
- 2005, invited
- 학회구분
- International
B. H. Lee, R. Choi, S.C. Song, J.Sim, C.Young, G. Bersuker, and H.K. Park and H.Hwang, “Physical Origin of Fast Transient Charging in Hafnium Based Gate Dielectrics”, Ext. Abs. of Symp. on SSDM, (2005), Invited.