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    • Electrical and Reliability characteristics of HfSiO MOSFET annealed in F2 ambient
    Conference
    SISC
    Author
    M. Chang, M. Jo, H. Park, M.S. Rahman, B.H. Lee, R. Choi, H. Hwang
    Year
    2005
    Date
    2005
    학회구분
    International

    M. Chang, M. Jo, H. Park, M.S. Rahman and B. H. Lee, R. Choi, and H. Hwang, “Electrical and Reliability characteristics of HfSiO MOSFET annealed in F2 ambient”, SISC, (2005).