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    • Hot carrier reliability study of high-k MOSFET after high pressure pure D2 annealing and subsequent annealing in N2
    Conference
    SISC
    Author
    M.S. Rahman, H. Park, M. Chang, B.H. Lee, R. Choi, H. Hwang
    Year
    2005
    Date
    2005
    학회구분
    International

    M.S. Rahman, H. Park, M. Chang, B. H. Lee, R. Choi and H. Hwang, “Hot carrier reliability study of high-k MOSFET after high pressure pure D2 annealing and subsequent annealing in N2”, SISC, (2005).