포항공대 EESL Fearless challenge

Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8Å-12Å)

Conference

Tech Dig. of Int. Electron Device Meetings

Author

B. H. Lee, R. Choi, L. Kang, S. Gopalan, R. Nieh, K. Onishi, Y.Jeon, W. Qi, C. Kang, and J. C. Lee

Year

2000

Date

2000

학회구분

International

File

2000_IEDM_BHLEE.pdf (416.4K) 1회 다운로드 DATE : 2021-04-01 17:01:38