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    • High Mobility HfSiON Gate Dielectric for High Performance Applications with Minimal Charge Trapping and Suppressed Crystallization
    Conference
    Tech. Dig. of IEDM
    Author
    M.A. Quevedo-Lopez, S.A. Krishnan, P.D. Kirsch, H.J. Li, J.H. Sim, C. Huffman, J. Peterson, B.H. Lee, G. Pant, B.E. Gnade, M.J. Kim, R.M. Wallace, D. Guo, H. Bu, T.P. Ma
    Year
    2005
    Date
    2005
    학회구분
    International

    M. A. Quevedo-Lopez, S. A. Krishnan, P. D. Kirsch, H. J. Li, J. H. Sim, C. Huffman, J. Peterson, B. H. Lee, G. Pant, B. E. Gnade, M. J. Kim, R. M. Wallace, D. Guo, H. Bu, and T.P. Ma, “High Mobility HfSiON Gate Dielectric for High Performance Applications with Minimal Charge Trapping and Suppressed Crystallization”, Tech. Dig. of IEDM, p.437, (2005).