Higher Permittivity rare earth doped HfO2 and ZrO2 dielectrics for logic and memory applications
Conference
VLSI-TSA
Author
S.Govindarajan, T.S.Boscke, P.D.Kirsch, M.A.Quevedo-Lopez, P.Sivasubramini, S.C.Song, R.W.Wallace, B.E.Gande, U.Schroeder, R.Ramanathan, B. H. Lee, R.Jammy
Year
2007
Date
2007
학회구분
International
File
2007_VLSI-TSA_SGOVINDARAJAN.pdf (2.4M) 0회 다운로드 DATE : 2021-04-05 00:36:29