포항공대 EESL Fearless challenge

High-quality ultrathin HfO2 gate dielectric MOSFETs with TaN electrode and nitridation surface preparation

Conference

Proceeding of Symposium VLSI Technology

Author

R. Choi, C.S.Kang, B. H. Lee, K.Onishi, R.Nieh, S.Gopalan, E.Dhamarajan, and J.C.Lee

Year

2001

Date

2001, Highlight session paper

학회구분

International

File

2001_Proc.Sym.VLSI.Tech_R.Choi.pdf (191.4K) 1회 다운로드 DATE : 2021-04-01 17:03:33