nMOSFET Reliability Improvement attributed to the Interfacial Dipole formed by La Incorporation in HfO2
- Conference
- SSDM
- Author
- C. Y. Kang, P. Kirsch, D. Heh, C. Young, P. Sivasubramani, G. Bersuker, S. C. Song, R. Choi, B. H. Lee, J. Lichtenwalner, J. S. Jur, A. I. Kingon, R. Jammy
- Year
- 2007
- Date
- 2007
- 학회구분
-
International
