Aggressively Scaled High-k Gate Dielectric with Excellent Performance and High Temperature Stability for 32nm and Beyond
Conference
Tech. Dig. of IEDM
Author
P. Sivasubramani, P. D. Kirsch, J. Huang, C. Park, Y. N. Tan, D. C. Gilmer, C. Young, R. Harris, S. C. Song, D. Heh, R. Choi, P. Majhi, G. Bersuker, B. H. Lee, H.-H. Tseng, J. S. Jur, D. J. Lichtenwalner, A. I. Kingon, and R. Jammy
