Comparative Study of Trapping Characteristics of HfSiON Dielectric in nMOSFETs with Poly-Si or TiN as Gate Electrode
Conference
Electronic Materials Conference
Author
D. C. Guo, L.Y. Song, X.W. Wang, T. P. Ma, B. H. Lee, S.Gopalan, R.Choi
Year
2004
Date
2004
학회구분
International