Polarity dependence of FN Stress induced degradation on NMOSFETs with Polysilicon Gate and HfSiON Gate Dielectrics
Conference
International symposium on the physical and failure analysis of integrated circuits (IPFA)
Author
R. Choi, B. H. Lee, G. Brown, P. Zeitzoff, J. H. Sim, and J. C. Lee
Year
2005
Date
2004
학회구분
International
File
2004_IPFA_R.Choi.pdf (188.2K) 0회 다운로드 DATE : 2021-04-05 01:55:20