Intrinsic characteristics of high-k devices and implications of transient charging effects
- Conference
- Tech.Dig. of IEDM
- Author
- B.H.Lee, C.D.Young, R.Choi, J.H.Sim, G.Bersuker, C.Y.Kang, R.Harris, G.A.Brown, K.Matthews, S.C.Song, N.Moumen, J.Barnett, P.Lysaght, K.S.Choi, H.C.Wen, C.Huffman, H.Alshareef, P.Majhi, S.Gopalan, J.Peterson, P.Kirsh, H.-J Li, J.Gutt, M.Gardner, H.R.Huff,
- Year
- 2004
- Date
- 2004
- 학회구분
-
International
