Gate First Band Edge High-k/Metal Stacks with EOT=0.74nm for 22nm Node nFETs
Conference
Proc. of VLSI-TSA
Author
J. Huang, P. D. Kirsch, M. Hussain, D. Heh, P. Sivasubramani, C. Young, D. C. Gilmer, C.S. Park, Y. N. Tan, C. Park, H.R. Harris, P. Majhi, G. Bersuker, B .H. Lee, H.-H. Tseng and R. Jammy
