목록 게시판 리스트 옵션 검색 Polarity dependence of FN Stress induced degradation on NMOSFETs with Polysilicon Gate and HfSiON Gate Dielectrics Conference International symposium on the physical and failure analysis of integrated circuits (IPFA) Author R. Choi, B. H. Lee, G. Brown, P. Zeitzoff, J. H. Sim, and J. C. Lee Year 2004 Date 2004 학회구분 International File 2004_IPFA_R.Choi.pdf (188.2K) 0회 다운로드 DATE : 2021-04-05 02:17:04
