목록 게시판 리스트 옵션 검색 Achieving Low Vt ＜-0.3V and Thin EOT ~1.0nm in Gate First Metal/High-k pMOSFET for High Performance CMOS Applications Conference Proc. of VLSI-TSA Author C. S. Park, G. Bersuker, S. C. Song, H. B. Park, C. Burham, B. S. Ju, C. Park, P. Kirsch, B. H. Lee and R. Jammy Year 2008 Date 2008 학회구분 International File 2008_VLSITSA_CSPARK.pdf (513.9K) 0회 다운로드 DATE : 2021-04-01 19:10:19
