Performance and Reliability characterization of the band edge high-k.metal gate MOSFETs withal-doped Hf-silicate gate dielectrics
- Conference
- Proc. of Int. Rel. Phys. Symp.
- Author
- C.Y. Kang, C.S. Park, D. Heh, C. Young, P. Kirsch, H.B. Park, G. Bersuker, J.-W.Yang, B.H. Lee. J.S.Jur, A.I. Kingon, R.Jammy
- Year
- 2008
- Date
- 2008
- 학회구분
-
International
