The Effects Of Ge Composition And Si Cap Thickness On Hot Carrier Reliability Of Si/Si1-XGex/Si P-MOSFETS With High-K/Metal Gate
Conference
Proc. Of Symp. On VLSI Technology, p.56
Author
W.-Y. Loh, P. Majhi, S.-H. Lee, J.-W. Oh, B. Sassman, C. Young, G. Bersuker, B.-J. Cho, C.-S. Park, C.-Y. Kang, P. Kirsch, B.-H. Lee, H.R. Harris, H.-H. Tseng, R. Jammy
