목록 게시판 리스트 옵션 검색 Mechanisms of Oxygen and Hydrogen Passivation using High Pressure Post-annealing Processes to Enhance the Performance of MOSFETs with Metal Gate/High-k Dielectric Conference Ext. Abs. of Symp. On Solid State Device and Materials, p.22 Author C.Y. Kang, C.S.Park, H.K.Park, S.C.Song, .R.Choi, B.H.Park, B.Woo, K.T.Lee, J.Lee, H.Hwang, G.Bersuker, B.H.Lee, H.H.Tseng, R.Jammy Year 2008 Date 2008 학회구분 International
