The Impact of La-Doping on the Reliability of Low Vth High-k/Metal Gate nMOSFETs under Various Gate Stress Conditions
Conference
Proc. of Int. Electron Device Meeting, p.115
Author
C.Y. Kang, C.D. Young, J. Huang, P. Kirsch, D. Heh, P. Sivasubramani, H.K. Park, G. Bersuker, B.H. Lee, H.S. Choi, K.T. Lee, Y-H. Jeong, J. Lichtenwalner, A.I. Kingon, H-H Tseng, R. Jammy
