Device and Reliability Improvement of HfSiON+LaOx/Metal Gate Stacks for 22nm Node Application
Conference
Proc. of Int. Electron Device Meeting, p.45
Author
J. Huang, P.D. Kirsch, D. Heh, C.Y. Kang, G. Bersuker, M. Hussain, P. Majhi, P. Sivasubramani, D.C. Gilmer, N. Goel, M.A. Quevedo-Lopez, C. Young, C.S. Park, C. Park, P. Y. Hung, J. Price, H.R. Harris, B .H. Lee, H.-H. Tseng, R. Jammy
