Kim, Cihyun (C.H.Kim)
Ph.D 2022
82-54-279-5422 cihyun@postech.ac.kr
- Current affiliation
- 2022- , Samsung Electronics Memory Business
- Education
2021 – present : Ph.D Course, Electrical Engineering, POSTECH
2016 – 2021 : Ph.D Course, Dept. of Material Science and Engineering, Gwangju Institute of Science and Technology (GIST)
2014 – 2016 : M.S., School of Information and Communications, Gwangju Institute of Science and Technology (GIST)
2010 – 2014 : B.S., Department of Electrical Engineering, Ajou University
- Research Interest
- Graphene-based optoelectronics
- Publication
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Journals
M.K.Gwon, C.H. Kim, K.E.Chang, T.J. Yoo, B.H.Lee*, "High performance near-infrared photodetector using chemically doped graphene /Ge Schottky junction," Submitted to ACS Photonics (2021).
T.J.Yoo, W.S.Kim, K.E.Chang, C.H.Kim, M.K.Kwon, J.Y.Jo and B.H. Lee*," High gain and broadband absorption in graphene photodetector decorated with Bi2Te3 nanowires," submitted to Nanomaterials (2021).
T.J.Yoo, S.Y.Kim, M.G.Kwon, C.H.Kim, K.E.Chang, H.J.Hwang and B.H. Lee*, "A facile method to improve the detectivity of graphene/p-type silicon heterojunction photodetector," In revision, Laser and Photonics Reviews (2021).
C.H.Kim, T.Jyoo, K.E.Chang, M.G.Kwon. B.H.Lee*, "Highly Responsive Near Infrared Photodetector with Low Dark Current using Graphene/Germanium Schottky Junction with Al2O3 Interfacial Layer," in press, Nanophotonics (2021).
S.C. Kang, H.W. Jung, S.J. Chang, S.M. Kim, S.K. Lee, B.H.Lee, H.C. Kim, Y.S. Noh, S.H. Lee, S.I. Kim, H.K. Ahn, J.W. Lim, "Quantitative defect density extraction method for Metal–Insulator–Metal Capacitor," Nanomaterials 10(11), p.2116 (2020).
S.W.Heo, M.G. Gwon, C.H. Kim, S.M. Kim, Y.S. Lee, K.E. Chang and B.H. Lee*, "Tunable AC/DC converter using graphene-germanium barristor based half-wave rectifie,” AIP Advances 9(9), 095009, (2019).
N.S.Lim, Y.S.Park, J.K. Kim, T.J.Yoo, H.H. Kim, Y. Kumaresan, W.C.Kim, S.J. Cho, S.C.Kwon, B.H.Lee, T.H.Lee, G.Y.Jung, "Enhanced Photo-response of MoS₂ Photodetectors by a Laterally Aligned SiO₂ Nanoribbon Array Substrate,” ChemNanoMat, 5(10), 1272-1279, (2019).
L. Lee, J.W. Hwang, J.W. Jung, J.C. Kim, H.I. Lee, S.W.Heo, M.H. Yoon, S.Ju. Choi, N.V.Long, J.S. Park, J.W. Jeong, J. Kim, K.R. Kim, D.H.Kim, S.I. Im, B.H.Lee, K.J.Cho, M.M. Sung, "ZnO Composite nanolayer with mobility edge quantization for multi-value logic transistors," Nature communications 10(1), p.1998 (2019).
K.E.Chang, C.H.Kim, T.J.Yoo, M.K.Kwon, S.Heo, S.Y.Kim, Y.Hyun, J.I.Yoo, H.C.Ko, B.H. Lee*, “ High-Responsivity Near-Infrared Photodetector Using Gate-modulated Graphene/Germanium Schottky Junction,” Advanced Electronic Materials, 5(6), 1800957 (2019).
K.E. Chang, T.J. Yoo, C.H. Kim, Y.J. Kim, S.K. Lee, S.Y. Kim, S.W.Heo, M.G. Kwon, B.H. Lee*, “Gate controlled graphene-silicon Schottky junction photodetector," Small 14(28), p. 1801182(2018).
N.S. Lim, T.J. Yoo, J.T. Kim, Y.S. Park, K. Yogeenth, H.H. Kim, W.C. Kim, B.H. Lee, G.Y. Jung, “Tunable Graphene Doping by Controlling Nanopores Geometry ona SiO2/Si Substrate,"RSC Advances 8(17), 9031-907 (2018).
K.T.Lee, C.Y.Kang, H.S.Choi, S.H.Hong, G.B.Choi, J.C.Kim, S.H.Song, R.H.Baek, M.S.Park, H.C. Sagong, B.H.Lee, G.Bersuker, H.H.Tseng, R.Jammy, Y.H.Jeong, “A comparative study of depth profiling of interface states using charge pumping and low frequency noise measurement in SiO2/HfO2 gate stack nMOSFETs,” Microelectronics Engineering, 88, p.3411, Dec. 2011
Conferences
C.H.Kim, T.J.Yoo, K.E.Chang, S.W.Heo, M.G.Kwon, H.J.Hwang and B.H.Lee*, “Infrared Photodetector Arrays using Epitaxy-Free and Extremely Low Power Graphene/Ge Schottky Junction”, NANO KOREA, (2022).
김시현, 권민규, 유태진, 황현준, 이병훈, "그래핀/n-well Si/p-Si 이중 접합 구조 기반의 고감도 광 검출기", The 29th Korean Conference of Semiconductors (KCS), (2022)
김승모, 이준호, 이용수, 이호인, 김시현, 권희진, 이해원, 황현준, Surajit Some, 이병훈, "저온 성장된 ZrO2 MIM 커패시터의 전기적 특성 향상 방법에 관한 연구", The 29th Korean Conference of Semiconductors (KCS), (2022)
권희진, 이용수, 김승모, 이준호, 김시현, 권민규, 황현준, 이병훈, "Polymer electret을 이용한 DNTT 기반의 비휘발성 OFET 메모리", The 29th Korean Conference of Semiconductors (KCS), (2022)
권민규, 김시현, 유태진, 황현준, 이병훈, "Implantation doping profile에 따른 N-well contact 그래핀 광검출기의 동작 메커니즘 및 반응 속도 향상에 관한 연구", The 29th Korean Conference of Semiconductors (KCS), (2022)
S.M.Kim, T.M.H.Nyugen, J.W.Oh, Y.S.Lee, S.C.Kang, H.I.Lee, C.H.Kim, S.Some, H.J.Hwang and B.H.Lee*, "Drastic reliability improvement using H2O2/UV treatment of HfO2 for heterogeneous integration", IEEE International Reliability Physics Symposium (IRPS), (2021).
Y.S.Lee, S.M.Kim, H.I.Lee, S.Y.Kim, C.H.Kim, H.J.Hwang, and B.H.Lee*, "Low Temperature and Parameter Controllable ZnO-DNTT Antiambipolar Transistor and Its Ternary Application" Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2020).
C.H.Kim, T.J.Yoo, M.G.Kwon, Y.S.Lee, H.J.Hwang, and B.H.Lee*, "Improving the Responsivity of Graphene/Ge Schottky Junction Infrared Photodetector via Impact Ionization" Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2020).
C.H.Kim, T.J.Yoo, M.G.Kwon, Y.S.Lee, H.J.Hwang and B.H.Lee*, "Graphene/Ge Schottky junction infrared photodetector with embedded MOS system", NANO KOREA, (2020) Best poster award.
유태진, 김소영, 김시현, 권민규, 황현준, 이병훈, "화학적 도핑 방법을 이용한 그래핀/p-Si 쇼트키 접합 조절 연구", The 27th Korean Conference of Semiconductors (KCS), (2020)
이용수, 김채은, 김소영, 김시현, 이호인, 김승모, 김기영, 황현준, 이병훈, "삼진상보보완회로를 위한 그래핀 기반의 P-type 삼진 로직 소자", The 27th Korean Conference of Semiconductors (KCS), (2020)
김승모, 김소영, 이호인, 이용수, 유태진, 김시현, 황현준, 이병훈, "화학적 토핑 방법을 이용한 그래핀 일함수 조율의 전기적 특성 분석", The 27th Korean Conference of Semiconductors (KCS), (2020)
권민규, 유태진, 김시현, 황현준, 이병훈, "Contact Metalontact Metal에 따른 WS2 광검출기의 암전류 감소에 관한 연구", The 27th Korean Conference of Semiconductors (KCS), (2020)
김시현, 유태진, 권민규, 이용수, 김승모, 황현준, 이병훈, "MOS 커패시터가 내장된 그래핀/Ge 쇼트키 접합 광소자", The 27th Korean Conference of Semiconductors (KCS), (2020)
Tae Jin Yoo, Wan Sik Kim,Sang Kyung Lee, Cihyun Kim, Min Gyu Kwon, Kyoung Eun Chang, Ji Young Jo and Byoung Hun Lee, "Study on graphene-Bi2Te3 nanowire hybrid photodetector using scanning photocurrent mapping", Nano Convergence Conference (NCC), (2020)
S.Y.Kim, Y.Lee, C.Kim, H.I.Lee, K.Kim, H.J.Hwang, B.H.Lee, "Dual Channel Ternary Graphene Barristor with Tunable Schottky Barrier Height controlled by Chemical Doping", 50th IEEE Semiconductor Interface Specilaists Conference (SISC), (2019)
T.J.Yoo, S.Y.Kim, C.Kim, M.G.Kwon, K.E.Chang, H.J.Hwang, B.H.Lee, "Dark current reduction for the chemically doped graphene/p-Si Schottky photodetector", 50th IEEE Semiconductor Interface Specilaists Conference (SISC), (2019)
Min Gyu Kwon, Cihyun Kim, Tae Jin Yoo, Kyoung Eun Chang, Hyeon Jun Hwang, Byoung Hun Lee, "Improvement of performance of graphene/Ge photodetector by graphene doping chemical concentration", NANO KOREA, (2019)
Cihyun Kim, Tae Jin Yoo, Min Gyu Kwon, Kyoung Eun Chang, Yongsu Lee, Hyeon Jun Hwang, and Byoung Hun Lee, "Performance improvement of graphene/Ge Schottky junction infrared photodetector with interfacial thin oxide layer", Nano Korea, (2019)
Yongsu Lee, Chaeeun Kim, So-Young Kim, Kiyung Kim, Seung-Mo Kim, Sunwoo Heo, Ho-In Lee, Cihyun Kim, Hyeon Jun Hwang, and Byoung Hun Lee, "Structural improvement of DNTT graphene barristor by vertical drain electrode", Nano Korea, (2019)
B.H.Lee, K.E.Chang, C.H. Kim, T.J.Yoo, M.G.Gwon, "High sensitivity and low cost infrared photodetector using a gated graphene/semiconductor heterojunction," presented at European MRS, Nice, France, 2019.
김시현, 장경은, 권민규, 유태진, 이병훈, "Ge 도핑 농도에 따른 그래핀/Ge 쇼트키 접합 광소자의 특성 변화", The 26th Korean Conference on Semiconductors (KCS), (2019) Best poster award.
권민규, 장경은, 김시현, 김소영, 유태진, 이병훈, "화학적 도핑을 적용한 그래핀-Ge 기반 광검출 소자의 암전류 감소", The 26th Korean Conference of Semiconductors (KCS), (2019)
So-Young Kim, Cihyun Kim, Ho-In Lee, Kiyung Kim, Kyoung Eun Chang, Sunwoo Heo, Byoung Hun Lee, "Effect of deposition temperature of ZnO(:N) for electrical characteristic of graphene barristor", Nano Korea, (2018).
김시현, 장경은, 유태진, 권민규, 이병훈, "ZnO top gate를 이용한 그래핀/Ge 쇼트키 접합의 광소자 응용", The 25th Korean Conference on Semiconductors (KCS), (2018), Best poster award.
이호인, 허선우, 김시현, 김윤지, 김승모, 김기영, 이용수, 이혜지, 이병훈, "ZnO:N-그래핀 접합 배리서터의 TiO2 층 페시베이션 효과", The 25th Korean Conference on Semiconductors (KCS), (2018)
권민규, 장경은, 김시현, 이병훈, "Planarization of Ge surface through Hydrogen annealing for graphene/Ge hybrid device application", Nano Convergence Conference (NCC), (2018)
Tae Jin Yoo, Sang Kyung Lee, Chunhum Cho, Kyoung Eun Chang, Cihyun Kim, Hyeon Jun Hwang, Byoung Hun Lee, "Influence of graphene/metal contact structure on the photocurrent generation", The 4th International Symposium on Hybrid Materials and Processing (HyMaP), (2017)
S. Heo, Y. J. Kim, C. H. Kim, S. K. Lee, H. J. Lee, H. J. Hwang, J. Noh, B. H. Lee, "Graphene-ZnO:N Schottky junction based thin film transistor," Silicon Nanoworkshop (SNW), (2017).
김시현, 김윤지, 유태진, 장경은, 이병훈, "고압 수소 열처리를 이용한 그래핀 광소자의 성능 개선", The 24th Korean Conference on Semiconductors (KCS), 2017
Kyoung Eun Chang, Tae Jin Yoo, Ci hyun Kim, Sang Kyung Lee, Yun Ji Kim, Byoung Hun Lee, "High responsivity Graphene/Ge Schottky junction photodetector using ITO top gate modulation", Int. Conf. on Electronic Materials and Nanotechnology for Green Environment (ENGE), (2016)
K.T.Lee, C.Y.Kang, S.H.Hong, H.S.Choi, G.B.Choi, J.C.Kim, S.H.Song, R.H.Baek, M.S..Park, S.H..Sagong, S.W.Jung, H.K.Park, H.S.Hwang, B.H.Lee, Y.H.Jeong, “Comparison of PECVD and RTCVD CESL Nitride stressor in reliability and performance improvement for high-k/metal gate CMOSFETs,” Ext. Abs. of Symp. On Solid State Device and Materials, p.362, (2008).
- Other Expertise
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Technical Skills
Composition analysis of compound semiconductors from HRXRD results using X’Pert software
Scanning electron microscopy, transmission electron microscopy, atomic force microscopy measurements and characterization
Photoluminescence, electroluminescence, I-V and Hall measurement
- Course Work
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Master
Electromagnetics
Quantum Physics for Engineering
Understanding and application of optical components and materials
Mathematical Analysis
Thin Film Technology
Transmission Electron Microscopy & Crystal Characteristics
Semiconductor Device Processing